METHODS OF DEPOSITING SILICON-CONTAINING FILMS FOR SEMICONDUCTOR DEVICES
개요
발명자
Ning Li
IPC 분류
CPC 분류
Methods of depositing silicon-containing films by plasma-enhanced atomic layer deposition (PEALD) are disclosed. Exemplary methods include exposing a substrate in a processing system to a silicon-containing precursor; exposing the substrate to a nitrogen-containing reactant; exposing the substrate to a first plasma including one or more of nitrogen (N) or hydrogen (H), and one or more of argon (Ar) or helium (He); and exposing the substrate to a second plasma including one or more of nitrogen (N), argon (Ar), helium (He), oxygen (O), nitrous oxide (NO), or carbon dioxide (CO).
원문 (중국어)
Methods of depositing silicon-containing films by plasma-enhanced atomic layer deposition (PEALD) are disclosed. Exemplary methods include exposing a substrate in a processing system to a silicon-containing precursor; exposing the substrate to a nitrogen-containing reactant; exposing the substrate to a first plasma including one or more of nitrogen (N) or hydrogen (H), and one or more of argon (Ar) or helium (He); and exposing the substrate to a second plasma including one or more of nitrogen (N), argon (Ar), helium (He), oxygen (O), nitrous oxide (NO), or carbon dioxide (CO).