MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE
개요
발명자
Ying-Cheng CHUANG
IPC 분류
CPC 분류
A manufacturing method of a semiconductor structure is provided. The method includes following steps. A substrate is provided. A trench is formed in the substrate, wherein an active area is protruded from the substrate and the active has a first width. A thin silicon layer is formed on the active area and a sidewall of the trench. A first oxide layer is formed on the thin silicon layer by providing oxygen airflow, wherein the first oxide layer is formed in a range of 400°C to 600°C. A second oxide layer is formed to fill the trench and cover the active area, wherein the second oxide layer is formed at a temperature higher than the first oxide layer. And an anneal process is performed to crystalize the thin silicon layer.
원문 (중국어)
A manufacturing method of a semiconductor structure is provided. The method includes following steps. A substrate is provided. A trench is formed in the substrate, wherein an active area is protruded from the substrate and the active has a first width. A thin silicon layer is formed on the active area and a sidewall of the trench. A first oxide layer is formed on the thin silicon layer by providing oxygen airflow, wherein the first oxide layer is formed in a range of 400°C to 600°C. A second oxide layer is formed to fill the trench and cover the active area, wherein the second oxide layer is formed at a temperature higher than the first oxide layer. And an anneal process is performed to crystalize the thin silicon layer.