GAPFILL METHOD, SYSTEM AND APPARATUS
개요
발명자
Yu Xu; Gyunghyun Ryu; Devika Choudhury; Michael Schmotzer; Mihaela Balseanu
IPC 분류
CPC 분류
A method, system and apparatus for depositing an oxide in a recess of a substrate is disclosed and includes a) providing the substrate in a chamber, the substrate including at least one opening to the recess, b) initially pulsing a precursor into the chamber to preferentially chemisorb in a first area, c) pulsing an oxygen species into the chamber to form a first oxide layer in the first area upon contact with the chemisorbed precursor, d) pulsing an inhibitor into the chamber to preferentially deposit an inhibitor layer on the first oxide layer, e) pulsing the precursor into the chamber to chemisorb to a second area, and/or f) pulsing the oxygen species into the chamber to form a second oxide layer in the second area upon contact with the chemisorbed precursor.
원문 (중국어)
A method, system and apparatus for depositing an oxide in a recess of a substrate is disclosed and includes a) providing the substrate in a chamber, the substrate including at least one opening to the recess, b) initially pulsing a precursor into the chamber to preferentially chemisorb in a first area, c) pulsing an oxygen species into the chamber to form a first oxide layer in the first area upon contact with the chemisorbed precursor, d) pulsing an inhibitor into the chamber to preferentially deposit an inhibitor layer on the first oxide layer, e) pulsing the precursor into the chamber to chemisorb to a second area, and/or f) pulsing the oxygen species into the chamber to form a second oxide layer in the second area upon contact with the chemisorbed precursor.