검색으로 돌아가기
기록
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE TREATMENT APPARATUS
발명심사 중
20청구항 · 2 독립항
§ Ⅰ
개요
발명자
Chihiro UMEDA; Yuta SAITO; Hiroyuki YAMASHITA
IPC 분류
H1L 21/2H1J 37/32
CPC 분류
H1L21/234H1J37/3244H1L21/217H1J2237/338
According to one embodiment, there is provided a method of manufacturing a semiconductor device. The method comprises radically oxidizing a first film by using a plasma generated by a treatment gas including a hydrogen isotope gas.
원문 (중국어)
According to one embodiment, there is provided a method of manufacturing a semiconductor device. The method comprises radically oxidizing a first film by using a plasma generated by a treatment gas including a hydrogen isotope gas.