PULSING DEPOSITION USING FAST RESPONSE MFC
개요
발명자
Zheyuan Chen; Jianxin Lei; Allyson N. Vu
IPC 분류
CPC 분류
Methods for forming work function layers (e.g., titanium nitride work function layers) for transistors are described. The methods energizing a process gas disposed in an inner volume of a processing chamber to create a plasma, and pulsing the process gas between a poison regime and a metallic regime using a fast response mass flow controller to deposit the work function layer on the substrate surface.
원문 (중국어)
Methods for forming work function layers (e.g., titanium nitride work function layers) for transistors are described. The methods energizing a process gas disposed in an inner volume of a processing chamber to create a plasma, and pulsing the process gas between a poison regime and a metallic regime using a fast response mass flow controller to deposit the work function layer on the substrate surface.