METHOD FOR REINFORCING BONDED WAFER
개요
출원인
SHANGHAI SIMWINGS TECHNOLOGY CO., LTD
발명자
Ziwen WANG; Wei ZHU; Xing WEI; Wei LI
IPC 분류
CPC 분류
The present invention provides a method for reinforcing a bonded wafer, which includes: providing the bonded wafer, which includes a substrate layer, a top silicon layer and an insulating buried oxide layer; performing a first thermal reinforcing process on the bonded wafer; performing an edge grinding process on an unbonded region along the periphery of the top silicon layer; and performing a second thermal reinforcing process on the bonded wafer at a temperature higher than a temperature at which the first thermal reinforcing process is performed.
원문 (중국어)
The present invention provides a method for reinforcing a bonded wafer, which includes: providing the bonded wafer, which includes a substrate layer, a top silicon layer and an insulating buried oxide layer; performing a first thermal reinforcing process on the bonded wafer; performing an edge grinding process on an unbonded region along the periphery of the top silicon layer; and performing a second thermal reinforcing process on the bonded wafer at a temperature higher than a temperature at which the first thermal reinforcing process is performed.