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기록

Through Substrate Via Formation on Patterned Substrates

발명심사 중
1조회수
20청구항 · 2 독립항
§ Ⅰ

개요

발명자

Elise LAFFOSSE; Charles Thomas CARLSON; Marvin Louis BERNT

IPC 분류

H1L 21/48B23K 26/382B23K 26/402B23K 103/C23C 14/2C23C 14/14G3F 7/16

CPC 분류

H1L21/486B23K26/382B23K26/402C23C14/21C23C14/28C23C14/14G3F7/16B23K2103/30B23K2103/54

Methods of processing a substrate are provided herein. In some embodiments, a method for processing a substrate includes: forming through via openings in a substrate from a back side of the substrate to a front side of the substrate, the substrate having front side metal interconnects disposed on the front side of the substrate that are exposed by the through via openings; and filling the through via openings to form through vias and forming back side metal interconnects on the back side of the substrate, wherein the back side metal interconnects are electrically coupled to the front side metal interconnects by the through vias.

원문 (중국어)

Methods of processing a substrate are provided herein. In some embodiments, a method for processing a substrate includes: forming through via openings in a substrate from a back side of the substrate to a front side of the substrate, the substrate having front side metal interconnects disposed on the front side of the substrate that are exposed by the through via openings; and filling the through via openings to form through vias and forming back side metal interconnects on the back side of the substrate, wherein the back side metal interconnects are electrically coupled to the front side metal interconnects by the through vias.