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DEVICE, METHOD AND SYSTEM TO CONDUCT HEAT THROUGH AN ACTIVE LAYER OF AN INTEGRATED CIRCUIT DIE

발명심사 중
20청구항 · 3 독립항
§ Ⅰ

개요

발명자

Abhishek Anil Sharma; Sagar Suthram; Wilfred Gomes; Anand Murthy; Tahir Ghani; Pushkar Ranade

IPC 분류

H1L 23/367H1L 23/373H1L 23/528

CPC 분류

H1L23/3675H1L23/3736H1L23/528H1L23/5283

Techniques and mechanisms to facilitate a conduction of heat across one or more active layers of an integrated circuit (IC) die. In an embodiment, an IC die comprises vertically stacked active layers, where metallization layers are variously disposed on opposite sides of a first such active layer. A thermal channel structure of the IC die extends through said first active layer, and through the metallization layers, to each of two thermally conductive material layers. Thermal interface structures are variously disposed each between a different respective distal end of the thermal channel structure and a different respective one of the thermally conductive material layers. In another embodiment, the thermal channel structure comprises a substantially columnar main body portion, which is electrically coupled to one or more interconnect structures of the metallization layers.

원문 (중국어)

Techniques and mechanisms to facilitate a conduction of heat across one or more active layers of an integrated circuit (IC) die. In an embodiment, an IC die comprises vertically stacked active layers, where metallization layers are variously disposed on opposite sides of a first such active layer. A thermal channel structure of the IC die extends through said first active layer, and through the metallization layers, to each of two thermally conductive material layers. Thermal interface structures are variously disposed each between a different respective distal end of the thermal channel structure and a different respective one of the thermally conductive material layers. In another embodiment, the thermal channel structure comprises a substantially columnar main body portion, which is electrically coupled to one or more interconnect structures of the metallization layers.