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기록

MODULARIZED CONSTRUCT FOR COMPLEX CHIPLET INTEGRATION PACKAGE

발명심사 중
3조회수
20청구항 · 3 독립항
§ Ⅰ

개요

IPC 분류

H1L 23/52H1L 23/H1L 23/31H1L 25/H1L 25/10

CPC 분류

H1L23/52H1L23/3107H1L23/562H1L24/97H1L25/105H1L25/50H1L24/16H1L2224/16245H1L2224/95001

Modularized construction of a structure is used for a multi-die integration package. Segregation of complex devices into substructures (sub-modules) are tested and verified as functional before final reconstitution into the multi-die integration package. The thermal coefficient of sub-modules can be fine-tuned for low chip module warpage. The sub-modules can be made with a glass interposer tuned with a certain coefficient of thermal expansion (CTE) and modulus to provide favorable warpage performance. Solder interconnects at high stress locations may be used to further reduce via and polyimide (PI) stresses. A minimal redistributed layer (RDL) comprising conductive metal patterns with a plurality of metal contacts thereon is formed on a polyimide (PI) or glass carrier and electrically interconnects the sub-modules together.

원문 (중국어)

Modularized construction of a structure is used for a multi-die integration package. Segregation of complex devices into substructures (sub-modules) are tested and verified as functional before final reconstitution into the multi-die integration package. The thermal coefficient of sub-modules can be fine-tuned for low chip module warpage. The sub-modules can be made with a glass interposer tuned with a certain coefficient of thermal expansion (CTE) and modulus to provide favorable warpage performance. Solder interconnects at high stress locations may be used to further reduce via and polyimide (PI) stresses. A minimal redistributed layer (RDL) comprising conductive metal patterns with a plurality of metal contacts thereon is formed on a polyimide (PI) or glass carrier and electrically interconnects the sub-modules together.