METAL INTERCONNECT STRUCTURES AND SEMI-DAMASCENE METHOD FOR FORMING THE SAME

원문 (중국어)

A first integrated line-and-via structure includes a first via portion embedded within at least one via-level dielectric layer and a first line portion embedded within a lower portion of a dielectric matrix that contacts a top surface of the at least one via-level dielectric layer within a first horizontal plane. The first integrated line-and-via structure includes a first metallic barrier liner and a first main metal portion including a planar portion having sidewalls in direct contact with first surface segments of the dielectric matrix. A second integrated line-and-via structure includes a second via portion contacting the first line portion and further includes a second line portion adjoined to a top end of the second via portion.