INNER SPACER AS ETCH STOP LAYER FOR BACKSIDE POWER RAIL
개요
출원인
INTERNATIONAL BUSINESS MACHINES CORPORATION
발명자
Ruilong Xie; Tao Li; HUIMEI ZHOU; Reinaldo Vega; Xiaoming Yang
IPC 분류
CPC 분류
Embodiments disclosed herein include a semiconductor structure. The semiconductor structure may include a deep via connecting a first source/drain (S/D) to a backside power rail (RB) below the first S/D, a dielectric etch stop inner spacer below the first S/D, and an RB sidewall surrounding the RB comprising an edge laterally overlapping the dielectric etch stop inner spacer.
원문 (중국어)
Embodiments disclosed herein include a semiconductor structure. The semiconductor structure may include a deep via connecting a first source/drain (S/D) to a backside power rail (RB) below the first S/D, a dielectric etch stop inner spacer below the first S/D, and an RB sidewall surrounding the RB comprising an edge laterally overlapping the dielectric etch stop inner spacer.