SEMICONDUCTOR DEVICE HAVING A POWER DISTRIBUTION LAYER
개요
발명자
Jin Kyeong SEONG
IPC 분류
CPC 분류
A semiconductor device includes transistors disposed on a substrate; and interconnection layers disposed over the transistors. The interconnection layers include a lower interconnection layer and an upper interconnection layer disposed over the lower interconnection layer. The upper interconnection layer includes first patterns extending in parallel in a first direction; and second patterns disposed between the first patterns, and connecting the first patterns to each other in a second direction perpendicular to the first direction. The second patterns are arranged spaced apart from each other in the first direction, and arranged in a zigzag shape in the second direction.
원문 (중국어)
A semiconductor device includes transistors disposed on a substrate; and interconnection layers disposed over the transistors. The interconnection layers include a lower interconnection layer and an upper interconnection layer disposed over the lower interconnection layer. The upper interconnection layer includes first patterns extending in parallel in a first direction; and second patterns disposed between the first patterns, and connecting the first patterns to each other in a second direction perpendicular to the first direction. The second patterns are arranged spaced apart from each other in the first direction, and arranged in a zigzag shape in the second direction.