Semiconductor Device and Method for Partial EMI Shielding
개요
발명자
JinHee Jung; ChangOh Kim
IPC 분류
CPC 분류
A semiconductor device includes a substrate. An electrical component is disposed over the substrate. An encapsulant is deposited over the electrical component. A vertical interconnect structure is disposed in the encapsulant. A shielding layer is formed over the encapsulant and vertical interconnect structure. A groove is formed in the shielding layer around the vertical interconnect structure. A portion of the shielding layer remains over the vertical interconnect structure as a contact pad.
원문 (중국어)
A semiconductor device includes a substrate. An electrical component is disposed over the substrate. An encapsulant is deposited over the electrical component. A vertical interconnect structure is disposed in the encapsulant. A shielding layer is formed over the encapsulant and vertical interconnect structure. A groove is formed in the shielding layer around the vertical interconnect structure. A portion of the shielding layer remains over the vertical interconnect structure as a contact pad.