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기록

SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR INTEGRATED STRUCTURE

발명심사 중
13청구항 · 2 독립항
§ Ⅰ

개요

IPC 분류

H1L 23/H1L 23/528H1L 25/65

CPC 분류

H1L24/5H1L23/5283H1L24/8H1L25/657H1L2224/5557H1L2224/8145

Embodiments of the present disclosure provide a semiconductor structure, including: a substrate, where the substrate is covered with a dielectric layer, and the dielectric layer includes a first region and a second region that surrounds the first region; a first conductive pad disposed in the dielectric layer of the first region, where a top surface of the first conductive pad has a recessed or protruded part, and the dielectric layer covers the top surface of the first conductive pad; and a first bonding pad disposed in the dielectric layer of the second region, where the first bonding pad is disposed around the first conductive pad, the first bonding pad has a top surface exposed to the dielectric layer, and a bottom surface of the first bonding pad is higher than the top surface of the first conductive pad.

원문 (중국어)

Embodiments of the present disclosure provide a semiconductor structure, including: a substrate, where the substrate is covered with a dielectric layer, and the dielectric layer includes a first region and a second region that surrounds the first region; a first conductive pad disposed in the dielectric layer of the first region, where a top surface of the first conductive pad has a recessed or protruded part, and the dielectric layer covers the top surface of the first conductive pad; and a first bonding pad disposed in the dielectric layer of the second region, where the first bonding pad is disposed around the first conductive pad, the first bonding pad has a top surface exposed to the dielectric layer, and a bottom surface of the first bonding pad is higher than the top surface of the first conductive pad.