SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
개요
발명자
Shunya MIKAMI; Katsutoki SHIRAI; Yuji OSUMI
IPC 분류
CPC 분류
A semiconductor device includes a semiconductor element and at least one metal bump. The semiconductor element includes a first electrode. The metal bump is bonded to the first electrode. The metal bump includes a fractured portion spaced apart from the first electrode in a thickness direction of the semiconductor element. As viewed in the thickness direction, a center of the fractured portion is offset from a center of the metal bump. The metal bump includes a large-diameter portion in contact with the first electrode, and a small-diameter portion having a diameter smaller than that of the large-diameter portion. The small-diameter portion is located on a side of the large-diameter portion opposite the first electrode.
원문 (중국어)
A semiconductor device includes a semiconductor element and at least one metal bump. The semiconductor element includes a first electrode. The metal bump is bonded to the first electrode. The metal bump includes a fractured portion spaced apart from the first electrode in a thickness direction of the semiconductor element. As viewed in the thickness direction, a center of the fractured portion is offset from a center of the metal bump. The metal bump includes a large-diameter portion in contact with the first electrode, and a small-diameter portion having a diameter smaller than that of the large-diameter portion. The small-diameter portion is located on a side of the large-diameter portion opposite the first electrode.