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기록

SEMICONDUCTOR PACKAGE

발명심사 중
20청구항 · 3 독립항
§ Ⅰ

개요

발명자

Dongwon KANG; Changyeon SONG; Jae-Ean LEE

IPC 분류

H1L 23/H1L 23/31H1L 23/498H1L 25/18H10D 1/60

CPC 분류

H1L24/24H1L23/49822H1L25/18H1L23/3128H1L2224/24265H1L2224/24997H10D1/60

A semiconductor package that includes a first redistribution substrate including a first surface and a second surface facing the first surface; a semiconductor chip on the first surface; an electronic element on the second surface; and an underfill pattern between the electronic element and the second surface. The first redistribution substrate includes a first insulating layer, and an insulating pattern and a dam structure both on the first insulating layer. The dam structure is spaced apart from the electronic element in a first direction parallel to the second surface. The insulating pattern includes an insulating material different from that of the first insulating layer. The insulating pattern is in contact with the first insulating layer and the underfill pattern.

원문 (중국어)

A semiconductor package that includes a first redistribution substrate including a first surface and a second surface facing the first surface; a semiconductor chip on the first surface; an electronic element on the second surface; and an underfill pattern between the electronic element and the second surface. The first redistribution substrate includes a first insulating layer, and an insulating pattern and a dam structure both on the first insulating layer. The dam structure is spaced apart from the electronic element in a first direction parallel to the second surface. The insulating pattern includes an insulating material different from that of the first insulating layer. The insulating pattern is in contact with the first insulating layer and the underfill pattern.