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기록

BONDING METHOD WITH LOCATION SPECIFIC PROCESSING

발명심사 중
1조회수
25청구항 · 3 독립항
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개요

발명자

Kevin Ryan; Christopher Michael Netzband; Chimaobi Mbanaso; Adam J. Gildea

IPC 분류

H1L 23/H1L 21/66

CPC 분류

H1L24/89H1L22/12H1L24/3H1L2224/3616H1L2224/89H1L2924/351

A method of forming a bonded wafer, where the method includes receiving a first wafer including a first surface characteristic and a second wafer including a second surface characteristic; based on the first surface characteristic, performing a first location specific processing on the first wafer to obtain a first surface-to-be-bonded including a third surface characteristic; and bonding the first surface-to-be-bonded of the first wafer with the second wafer.

원문 (중국어)

A method of forming a bonded wafer, where the method includes receiving a first wafer including a first surface characteristic and a second wafer including a second surface characteristic; based on the first surface characteristic, performing a first location specific processing on the first wafer to obtain a first surface-to-be-bonded including a third surface characteristic; and bonding the first surface-to-be-bonded of the first wafer with the second wafer.