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SEMICONDUCTOR DEVICE, INSULATION SWITCH, AND RECTIFIER CHIP

발명심사 중
1조회수
20청구항 · 2 독립항
§ Ⅰ

개요

IPC 분류

H1L 25/65H1L 23/H1L 23/495H10D 80/20

CPC 분류

H1L25/655H1L23/49513H1L23/49537H1L24/48H10D80/211H10D80/231H1L24/32H1L24/73H1L2224/32245H1L2224/48149H1L2224/48245H1L2224/73265H1L2924/14252

A semiconductor device includes: a first transformer; a second transformer; a first rectifier chip; a second rectifier chip; and a first frame. Each of the first rectifier chip and the second rectifier chip includes: a first output pad and a second output pad; a semiconductor substrate of a first conductivity type including a first surface; a first semiconductor region of a second conductivity type disposed on the first surface; a first transistor provided in the first semiconductor region and electrically connected to the first output pad; and a second semiconductor region of the second conductivity type provided at a position spaced apart from the first transistor in the first semiconductor region and electrically connected to the second output pad. The second semiconductor region is in contact with the semiconductor substrate. The first rectifier chip and the second rectifier chip are disposed to be spaced apart from each other.

원문 (중국어)

A semiconductor device includes: a first transformer; a second transformer; a first rectifier chip; a second rectifier chip; and a first frame. Each of the first rectifier chip and the second rectifier chip includes: a first output pad and a second output pad; a semiconductor substrate of a first conductivity type including a first surface; a first semiconductor region of a second conductivity type disposed on the first surface; a first transistor provided in the first semiconductor region and electrically connected to the first output pad; and a second semiconductor region of the second conductivity type provided at a position spaced apart from the first transistor in the first semiconductor region and electrically connected to the second output pad. The second semiconductor region is in contact with the semiconductor substrate. The first rectifier chip and the second rectifier chip are disposed to be spaced apart from each other.