FBAR STRUCTURE HAVING SINGLE CRYSTALLINE PIEZOELECTRIC LAYER AND FABRICATING METHOD THEREOF
개요
출원인
Shenzhen Newsonic Technologies Co., Ltd.
발명자
Jian WANG
IPC 분류
CPC 분류
A film bulk acoustic resonator (FBAR) structure includes a bottom cap wafer, a piezoelectric layer disposed on the bottom cap wafer, the piezoelectric layer including a single crystalline piezoelectric material, a bottom electrode disposed below the piezoelectric layer; a top electrode disposed above the piezoelectric layer; and a cavity disposed below the bottom electrode.
원문 (중국어)
A film bulk acoustic resonator (FBAR) structure includes a bottom cap wafer, a piezoelectric layer disposed on the bottom cap wafer, the piezoelectric layer including a single crystalline piezoelectric material, a bottom electrode disposed below the piezoelectric layer; a top electrode disposed above the piezoelectric layer; and a cavity disposed below the bottom electrode.