STATIC RANDOM-ACCESS MEMORY DEVICE
개요
발명자
Chun-Hsien HUANG; Yu-Tse KUO; Shu-Ru WANG; Chien-Hung CHEN; Tzu-Feng CHANG; Chun-Yen TSENG
IPC 분류
CPC 분류
Static random-access memory devices are provided. The static random-access memory device includes a first static random-access memory cell, a second static random-access memory cell adjacent to the first static random-access memory cell, an isolation structure between the first and second static random-access memory cells, a first dummy gate structure and a second dummy gate structure. The first dummy gate structure and the second dummy gate structure are on the isolation structure, between the first and second static random-access memory cells, and disposed along a first direction. A width of the isolation structure along the first direction is greater than or equal to a distance between a first sidewall of the first dummy gate structure facing away from the second dummy gate structure and a second sidewall of the second dummy gate structure facing away from the first dummy gate structure along the first direction.
원문 (중국어)
Static random-access memory devices are provided. The static random-access memory device includes a first static random-access memory cell, a second static random-access memory cell adjacent to the first static random-access memory cell, an isolation structure between the first and second static random-access memory cells, a first dummy gate structure and a second dummy gate structure. The first dummy gate structure and the second dummy gate structure are on the isolation structure, between the first and second static random-access memory cells, and disposed along a first direction. A width of the isolation structure along the first direction is greater than or equal to a distance between a first sidewall of the first dummy gate structure facing away from the second dummy gate structure and a second sidewall of the second dummy gate structure facing away from the first dummy gate structure along the first direction.