SEMICONDUCTOR DEVICE
개요
발명자
Chulkwon Park; Bok-Yeon Won; Jonghyuk Kim; Honggyun Kim; Sun Hee Nam; Joohyeong Lim
IPC 분류
CPC 분류
A semiconductor device may include a first substrate, a circuit device on the first substrate, an interlayer insulating film on the circuit device, a second substrate on the interlayer insulating film, the second substrate including a first surface adjacent to the interlayer insulating film and a second surface opposite to the first surface, a device isolation trench in the second substrate and adjacent to the second surface, a device isolation structure in the device isolation trench, a through isolation film extending in the second substrate and the device isolation structure, and a through via extending into the through isolation film and electrically connected to the circuit device.
원문 (중국어)
A semiconductor device may include a first substrate, a circuit device on the first substrate, an interlayer insulating film on the circuit device, a second substrate on the interlayer insulating film, the second substrate including a first surface adjacent to the interlayer insulating film and a second surface opposite to the first surface, a device isolation trench in the second substrate and adjacent to the second surface, a device isolation structure in the device isolation trench, a through isolation film extending in the second substrate and the device isolation structure, and a through via extending into the through isolation film and electrically connected to the circuit device.