SEMICONDUCTOR MEMORY DEVICES

원문 (중국어)

A semiconductor memory device includes a first word line extending on a substrate in a first direction parallel with an upper surface of the substrate; a first semiconductor pattern including a first impurity region, a first channel region, and a second impurity region, wherein the first semiconductor pattern intersects the first word line and extends in a second direction parallel with the upper surface of the substrate and intersects the first direction; a first bit line extending in a third direction perpendicular to the upper surface of the substrate, wherein the first bit line is electrically connected to the first impurity region; and a data storage element that is electrically connected to the second impurity region, wherein the first word line includes a first conductive pattern including a plurality of grains, and wherein a crystal direction of the plurality of grains is parallel with the upper surface of the substrate.