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기록

SEMICONDUCTOR MEMORY SYSTEM INCLUDING SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

발명심사 중
34청구항 · 6 독립항
§ Ⅰ

개요

발명자

Ki Chang JEONG; Nam Kuk KIM

IPC 분류

H10B 41/27H1L 23/522H10B 41/10H10B 43/10H10B 43/27

CPC 분류

H10B41/27H1L23/5226H10B41/10H10B43/10H10B43/27

A semiconductor memory system includes a semiconductor memory device. The semiconductor memory device includes a first stack, a second stack, and a third stack. The second stack is disposed over the first stack. The second stack includes a plurality of word lines stacked and insulated from each other. The third stack is disposed over the second stack. The third stack includes a second selection line. The channel structure includes a first channel pillar formed through the first stack and the second stack, and a second channel pillar contacting the first channel pillar and formed in the third stack. A diameter of the second channel pillar is smaller than a diameter of the first channel pillar.

원문 (중국어)

A semiconductor memory system includes a semiconductor memory device. The semiconductor memory device includes a first stack, a second stack, and a third stack. The second stack is disposed over the first stack. The second stack includes a plurality of word lines stacked and insulated from each other. The third stack is disposed over the second stack. The third stack includes a second selection line. The channel structure includes a first channel pillar formed through the first stack and the second stack, and a second channel pillar contacting the first channel pillar and formed in the third stack. A diameter of the second channel pillar is smaller than a diameter of the first channel pillar.