METHOD OF FABRICATING SEMICONDUCTOR MEMORY DEVICE
개요
출원인
Samsung Electronics Co., Ltd.
발명자
Yong Jae LEE; Seul Ji SONG
IPC 분류
CPC 분류
A method of fabricating a semiconductor memory device includes forming a first electrode on a substrate; forming an OTS film on the first electrode; forming a second electrode on the OTS film. The OTS film includes a first surface that is in contact with the first electrode and a second surface that is in contact with the second electrode. An area of the first surface and an area of the second surface are different from each other.
원문 (중국어)
A method of fabricating a semiconductor memory device includes forming a first electrode on a substrate; forming an OTS film on the first electrode; forming a second electrode on the OTS film. The OTS film includes a first surface that is in contact with the first electrode and a second surface that is in contact with the second electrode. An area of the first surface and an area of the second surface are different from each other.