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기록

DEVICE, METHOD AND SYSTEM TO PROVIDE HETEROGENEOUS MEMORY CIRCUIT STACKING

발명심사 중
3조회수
20청구항 · 3 독립항
§ Ⅰ

개요

발명자

Abhishek Anil Sharma; Sagar Suthram; Wilfred Gomes; Tahir Ghani; Anand Murthy; Pushkar Ranade

IPC 분류

H10B 80/H1L 23/H1L 25/H1L 25/65H1L 25/18H10B 10/H10B 12/

CPC 분류

H10B80/H1L24/8H1L24/80H1L25/657H1L25/18H1L25/50H10B10/12H10B12/315H1L2224/8145H1L2224/80895H1L2224/80896H1L2924/1431H1L2924/1436H1L2924/1437

Techniques and mechanisms for an integrated circuit (IC) die structure to comprise heterogeneous active layers which are variously stacked in respective face-to-back arrangements. In an embodiment, three active layers each correspond to a different respective transistor type, wherein two active layers comprise transistors of respective memory arrays, and a third active layer comprises transistors of circuitry which is coupled to access the memory arrays. In another embodiment, hybrid bond structures are disposed between two of the active layers.

원문 (중국어)

Techniques and mechanisms for an integrated circuit (IC) die structure to comprise heterogeneous active layers which are variously stacked in respective face-to-back arrangements. In an embodiment, three active layers each correspond to a different respective transistor type, wherein two active layers comprise transistors of respective memory arrays, and a third active layer comprises transistors of circuitry which is coupled to access the memory arrays. In another embodiment, hybrid bond structures are disposed between two of the active layers.