SEMICONDUCTOR DEVICES WITH INSULATION FEATURES
개요
출원인
Taiwan Semiconductor Manufacturing Company, Ltd.
발명자
Tzu-Ging Lin
IPC 분류
CPC 분류
Semiconductor devices with insulation structures and methods of fabrication are provided. A method includes forming fins over a substrate; forming a gate over the fins, wherein a sidewall spacer is laterally adjacent to the gate; removing an upper portion of the sidewall spacer; forming a cavity by removing a selected segment of the gate and removing a selected fin located under the selected segment; and forming an insulation feature in the cavity.
원문 (중국어)
Semiconductor devices with insulation structures and methods of fabrication are provided. A method includes forming fins over a substrate; forming a gate over the fins, wherein a sidewall spacer is laterally adjacent to the gate; removing an upper portion of the sidewall spacer; forming a cavity by removing a selected segment of the gate and removing a selected fin located under the selected segment; and forming an insulation feature in the cavity.