SHALLOW-TRENCH ISOLATION PROTECTION STRUCTURE FOR NANOSTRUCTURE FIELD-EFFECT TRANSISTOR DEVICE AND METHODS OF FORMING

원문 (중국어)

A shallow trench isolation (STI) protection structure is formed on the STI regions of a nanostructure field-effect transistor (NSFET) device. The STI protection structure protects the STI regions during a subsequent selective etching process for removing a disposable material used in a disposable oxide interposer (DOI) process for forming the NSFET device. The STI protection structure may include a single hard mask layer with high etching resistance to the selective etching process. Alternatively, the STI protection structure may have a dual-layered or tri-layered structure with different materials in each sublayer of the STI protection structure. Area-selective atomic layer deposition (AS-ALD) is used to form the STI protection structure such that the STI protection structure is selectively formed on the upper surface of the STI regions.