Field-Effect Transistor Device Having Blocking Region

원문 (중국어)

The present invention discloses a field-effect transistor device having a blocking region, for use in solving the problem of short-channel effects of field-effect transistors in the prior art. The field-effect transistor device includes an active layer, and the active layer includes a source region, a drain region, and a channel region located between the source region and the drain region. When the device is switched on, an effective channel and an equivalent source region and an equivalent drain region that are distant from the effective channel at least in the thickness direction of the channel region are formed in the channel region, and the field-effect transistor device supplies an working current by connecting the source region and the drain region by means of the effective channel, the equivalent source region, and the equivalent drain region; the field-effect transistor further includes a carrier blocking region, and in a plane perpendicular to the length direction of the effective channel, the vertical projections of the equivalent source region and the equivalent drain region are located in the vertical projection of the carrier blocking region.