SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
개요
출원인
Japan Display Inc.
발명자
Hajime WATAKABE; Masashi TSUBUKU; Toshinari SASAKI; Akihiro HANADA; Takaya TAMARU; Marina MOCHIZUKI; Ryo ONODERA
IPC 분류
CPC 분류
A semiconductor device includes an oxide insulating layer, an oxide semiconductor layer, a gate insulating layer, and a gate electrode. In a first region in which the oxide insulating layer, the oxide semiconductor layer, the gate insulating layer, and the gate electrode are stacked in this order, the gate electrode contains an impurity. In a second region in which the oxide insulating layer, the oxide semiconductor layer, and the gate insulating layer are stacked in this order, the oxide insulating layer, the oxide semiconductor layer, and the gate insulating layer contain the impurity. In a third region in which the oxide insulating layer and the gate insulating layer are stacked in this order, the oxide insulating layer and the gate insulating layer contain the impurity. In a stacked direction of the second region, a concentration profile of the impurity comprises a first peak and a second peak.
원문 (중국어)
A semiconductor device includes an oxide insulating layer, an oxide semiconductor layer, a gate insulating layer, and a gate electrode. In a first region in which the oxide insulating layer, the oxide semiconductor layer, the gate insulating layer, and the gate electrode are stacked in this order, the gate electrode contains an impurity. In a second region in which the oxide insulating layer, the oxide semiconductor layer, and the gate insulating layer are stacked in this order, the oxide insulating layer, the oxide semiconductor layer, and the gate insulating layer contain the impurity. In a third region in which the oxide insulating layer and the gate insulating layer are stacked in this order, the oxide insulating layer and the gate insulating layer contain the impurity. In a stacked direction of the second region, a concentration profile of the impurity comprises a first peak and a second peak.