TRANSISTOR METALLIZATION ENDCAP SCALING FOR PERFORMANCE OPTIMIZATION
개요
발명자
Tao Chu; Guowei Xu; Robin Chao; Feng Zhang; Ting-Hsiang Hung; Chia-Ching Lin; Yang Zhang; Kan Zhang; Chun Wing Yeung; Minwoo Jang; Yanbin Luo; Paul Packan; Chung-Hsun Lin; Anand Murthy
IPC 분류
CPC 분류
Integrated circuit (IC) devices having transistors with electrodes and/or contacts in close proximity. An IC device includes a transistor structure having a channel between a source and a drain, a gate electrode over the channel region, and contacts on the source and the drain, and the electrode and contacts extend past an edge or sidewall of the channel different distances, that is, with unaligned ends. One or both of the source and drain contacts may extend past the gate electrode. The gate electrode may extend past one or both of the source and drain contacts. The source and drain contacts and the gate electrode may be formed to unaligned dimensions or may be disaligned by trimming.
원문 (중국어)
Integrated circuit (IC) devices having transistors with electrodes and/or contacts in close proximity. An IC device includes a transistor structure having a channel between a source and a drain, a gate electrode over the channel region, and contacts on the source and the drain, and the electrode and contacts extend past an edge or sidewall of the channel different distances, that is, with unaligned ends. One or both of the source and drain contacts may extend past the gate electrode. The gate electrode may extend past one or both of the source and drain contacts. The source and drain contacts and the gate electrode may be formed to unaligned dimensions or may be disaligned by trimming.