SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
개요
출원인
Taiwan Semiconductor Manufacturing Company, Ltd.
발명자
Ya-Ling Lee; Wei-Gang Chiu; Han-Ting Tsai; Chung-Te Lin
IPC 분류
CPC 분류
A semiconductor device includes a substrate, a gate electrode, a gate dielectric layer, a channel layer, a source electrode and a drain electrode. The gate electrode is disposed over the substrate. The gate dielectric layer is disposed over the gate electrode. The channel layer is disposed over the gate dielectric layer. The source electrode and the drain electrode are disposed over the channel layer and beside the gate electrode. In some embodiments, each of the source electrode and the drain electrode includes a glue layer and a metal pattern, and a thickness of the glue layer adjacent to a sidewall of the metal pattern is greater than a thickness of the glue layer adjacent to a bottom of the metal pattern.
원문 (중국어)
A semiconductor device includes a substrate, a gate electrode, a gate dielectric layer, a channel layer, a source electrode and a drain electrode. The gate electrode is disposed over the substrate. The gate dielectric layer is disposed over the gate electrode. The channel layer is disposed over the gate dielectric layer. The source electrode and the drain electrode are disposed over the channel layer and beside the gate electrode. In some embodiments, each of the source electrode and the drain electrode includes a glue layer and a metal pattern, and a thickness of the glue layer adjacent to a sidewall of the metal pattern is greater than a thickness of the glue layer adjacent to a bottom of the metal pattern.