OXIDE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, AND ELECTRONIC DEVICE
개요
출원인
Japan Display Inc.; IDEMITSU KOSAN CO., LTD.
발명자
Hajime WATAKABE; Masashi TSUBUKU; Toshinari SASAKI; Takaya TAMARU; Marina MOCHIZUKI; Ryo ONODERA; Masahiro WATABE; Daichi SASAKI; Emi KAWASHIMA; Yuki TSURUMA
IPC 분류
CPC 분류
An oxide semiconductor film having crystallinity includes indium (In) and a first metal element (M1) selected from the group consisting of aluminum (Al), gallium (Ga), yttrium (Y), scandium (Sc), and lanthanoid elements. A crystal structure of the oxide semiconductor film is a bixbyite structure. At least a first peak of a (222) plane and a second peak of a (440) plane are observed in a diffraction pattern of the oxide semiconductor film obtained by an out-of-plane XRD measurement using Cu-Kα radiation. A ratio of an intensity of the first peak to an intensity of the second peak is less than or equal to 125.
원문 (중국어)
An oxide semiconductor film having crystallinity includes indium (In) and a first metal element (M1) selected from the group consisting of aluminum (Al), gallium (Ga), yttrium (Y), scandium (Sc), and lanthanoid elements. A crystal structure of the oxide semiconductor film is a bixbyite structure. At least a first peak of a (222) plane and a second peak of a (440) plane are observed in a diffraction pattern of the oxide semiconductor film obtained by an out-of-plane XRD measurement using Cu-Kα radiation. A ratio of an intensity of the first peak to an intensity of the second peak is less than or equal to 125.