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기록

SEMICONDUCTOR DEVICE INCLUDING BACKSIDE CONTACT PLUG

발명심사 중
20청구항 · 3 독립항
§ Ⅰ

개요

발명자

Seunggeun JUNG; Dongwon KIM; Changwoo NOH; Beomjin PARK

IPC 분류

H10D 30/67H1L 23/528H10D 62/13H10D 62/60

CPC 분류

H10D30/6757H1L23/5286H10D62/151H10D62/60H10D30/6735

A semiconductor device includes: a first source/drain region and a second source/drain region on a first channel structure; a third source/drain region and a fourth source/drain region on a second channel structure; a first backside contact plug recessing the second source/drain region by a first depth from a lower surface of the second source/drain region; and a second backside contact plug recessing the fourth source/drain region by a second depth, smaller than the first depth, from a lower surface of the fourth source/drain region, wherein the second source/drain region comprises a first impurity region comprising a first impurity on an interface with the first backside contact plug, and the fourth source/drain region comprises another first impurity region comprising a second impurity on an interface with the second backside contact plug.

원문 (중국어)

A semiconductor device includes: a first source/drain region and a second source/drain region on a first channel structure; a third source/drain region and a fourth source/drain region on a second channel structure; a first backside contact plug recessing the second source/drain region by a first depth from a lower surface of the second source/drain region; and a second backside contact plug recessing the fourth source/drain region by a second depth, smaller than the first depth, from a lower surface of the fourth source/drain region, wherein the second source/drain region comprises a first impurity region comprising a first impurity on an interface with the first backside contact plug, and the fourth source/drain region comprises another first impurity region comprising a second impurity on an interface with the second backside contact plug.