SEMICONDUCTOR DEVICE
개요
출원인
Japan Display Inc.; IDEMITSU KOSAN CO., LTD.
발명자
Hajime WATAKABE; Masashi TSUBUKU; Toshinari SASAKI; Takaya TAMARU; Marina MOCHIZUKI; Ryo ONODERA; Masahiro WATABE
IPC 분류
CPC 분류
A semiconductor device including a transistor, the transistor includes a first gate electrode, a first gate insulating film provided on the first gate electrode, an oxide semiconductor layer provided on the first gate insulating film, overlapping the first gate electrode, and having a polycrystalline structure, a second gate insulating film provided on the oxide semiconductor layer, and a second gate electrode provided on the second gate insulating film and overlapping the first gate electrode, wherein the first gate electrode has a first region and a second region, the first region overlaps the oxide semiconductor layer and protrudes in a first direction from the second gate electrode in a plan view, and the second region overlaps the second gate electrode and protrudes in a second direction that intersects the first direction from the oxide semiconductor layer in a plan view.
원문 (중국어)
A semiconductor device including a transistor, the transistor includes a first gate electrode, a first gate insulating film provided on the first gate electrode, an oxide semiconductor layer provided on the first gate insulating film, overlapping the first gate electrode, and having a polycrystalline structure, a second gate insulating film provided on the oxide semiconductor layer, and a second gate electrode provided on the second gate insulating film and overlapping the first gate electrode, wherein the first gate electrode has a first region and a second region, the first region overlaps the oxide semiconductor layer and protrudes in a first direction from the second gate electrode in a plan view, and the second region overlaps the second gate electrode and protrudes in a second direction that intersects the first direction from the oxide semiconductor layer in a plan view.