METHODS OF FORMING MICROELECTRONIC DEVICES INCLUDING STACK STRUCTURES HAVING DOPED INTERFACIAL REGIONS
개요
발명자
Everett A. McTeer; Farrell M. Good; John M. Meldrim; Jordan D. Greenlee; Justin D. Shepherdson; Naiming Liu; Yifen Liu
IPC 분류
CPC 분류
A microelectronic device comprises conductive structures and insulative structures vertically alternating with the conductive structures. At least one of the insulative structures includes interfacial regions extending inward from vertical boundaries of the at least one of the insulative structures, and central region vertically interposed between the interfacial regions. The interfacial regions are doped with one or more of carbon and boron. The insulative structures comprise a lower concentration of the one or more of carbon and boron than the interfacial regions. Additional microelectronic devices, electronic systems, and methods are also described.
원문 (중국어)
A microelectronic device comprises conductive structures and insulative structures vertically alternating with the conductive structures. At least one of the insulative structures includes interfacial regions extending inward from vertical boundaries of the at least one of the insulative structures, and central region vertically interposed between the interfacial regions. The interfacial regions are doped with one or more of carbon and boron. The insulative structures comprise a lower concentration of the one or more of carbon and boron than the interfacial regions. Additional microelectronic devices, electronic systems, and methods are also described.