CAPPING LAYER FOR TRANSITION METAL DICHALCOGENIDE BASED TRANSISTOR STRUCTURES
개요
발명자
Arnab Sen Gupta; Sarah Atanasov; Uygar E. Avci; Pratyush Buragohain; Jiun-Ruey Chen; Mahmut Sami Kavrik; Ande Kitamura; Chia-Ching Lin; Kirby Maxey; Matthew Metz; Carl H. Naylor; Kevin P. O’Brien
IPC 분류
CPC 분류
Devices, transistor structures, systems, and techniques are described herein related to field effect transistors having one or more metal chalcogenide nanoribbons coupled to a source and a drain. Channel regions of the metal chalcogenide nanoribbons are coupled to a gate structure between the source and the drain. The metal chalcogenide nanoribbons are capped with a layer including an oxide of a metal or metalloid element, optionally doped with or including carbon.
원문 (중국어)
Devices, transistor structures, systems, and techniques are described herein related to field effect transistors having one or more metal chalcogenide nanoribbons coupled to a source and a drain. Channel regions of the metal chalcogenide nanoribbons are coupled to a gate structure between the source and the drain. The metal chalcogenide nanoribbons are capped with a layer including an oxide of a metal or metalloid element, optionally doped with or including carbon.