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기록
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
발명심사 중
20청구항 · 3 독립항
§ Ⅰ
개요
출원인
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
발명자
Tzu-Ging LIN
IPC 분류
H10D 62/10H10D 30/1H10D 30/43H10D 30/62H10D 30/67H10D 64/1H10D 89/10
CPC 분류
H10D62/102H10D30/24H10D30/62H10D30/6735H10D64/17H10D89/10H10D30/14H10D30/43H10D30/6757H10D62/121
Embodiments of present disclosure relates to forming isolation structures in gate structures to prevent current leakage through source/drain regions (EPI), transistors, and silicon substrate. The isolation structures may be formed in the gate structure prior to or after the replacement gate sequence.
원문 (중국어)
Embodiments of present disclosure relates to forming isolation structures in gate structures to prevent current leakage through source/drain regions (EPI), transistors, and silicon substrate. The isolation structures may be formed in the gate structure prior to or after the replacement gate sequence.