GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DIFFERENTIATED INTERNAL SPACERS
개요
발명자
Robin CHAO; Tao CHU; Guowei XU; Feng ZHANG; Ting-Hsiang HUNG; Chia-Ching LIN; Yang ZHANG; Kan ZHANG; Chun-Wing YEUNG; Chung-Hsun LIN; Anand S. MURTHY; Marko RADOSAVLJEVIC
IPC 분류
CPC 분류
Gate-all-around integrated circuit structures having differentiated internal spacers are described. For example, an integrated circuit structure includes a first set of horizontal nanowires above a sub-fin structure. A first gate structure is over the first set of horizontal nanowires. The first set of horizontal nanowires extends laterally beyond the first gate structure. First dielectric spacers are adjacent to the first gate structure and vertically between adjacent ones of the first set of horizontal nanowires. A second set of horizontal nanowires is over the first set of horizontal nanowires. A second gate structure is over the second set of horizontal nanowires. The second set of horizontal nanowires extends laterally beyond the second gate structure. Second dielectric spacers are adjacent to the second gate structure and vertically between adjacent ones of the second set of horizontal nanowires. The second dielectric spacers are in contact with but discontinuous from the first dielectric spacers.
원문 (중국어)
Gate-all-around integrated circuit structures having differentiated internal spacers are described. For example, an integrated circuit structure includes a first set of horizontal nanowires above a sub-fin structure. A first gate structure is over the first set of horizontal nanowires. The first set of horizontal nanowires extends laterally beyond the first gate structure. First dielectric spacers are adjacent to the first gate structure and vertically between adjacent ones of the first set of horizontal nanowires. A second set of horizontal nanowires is over the first set of horizontal nanowires. A second gate structure is over the second set of horizontal nanowires. The second set of horizontal nanowires extends laterally beyond the second gate structure. Second dielectric spacers are adjacent to the second gate structure and vertically between adjacent ones of the second set of horizontal nanowires. The second dielectric spacers are in contact with but discontinuous from the first dielectric spacers.