SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
개요
출원인
Hon Young Semiconductor Corporation
발명자
Yan-Ru CHEN; Chao-Yi CHANG
IPC 분류
CPC 분류
A semiconductor device includes a substrate, a drift region, a channel region, a source region, a gate electrode layer and a gate pad. The drift region is located in the substrate. The gate electrode layer is located above the drift region and is adjacent to the channel region and the source region, in which the gate electrode layer includes a cell area, a connection area and a gate pad area. The cell area at least covers the channel region in the substrate. The connection area is adjacent to the cell area, in which the connection area has at least one opening that penetrates the connection area. The gate pad contacts the gate pad area of the gate electrode layer, in which the gate pad and the at least one opening of the connection area of the gate electrode layer is laterally separated.
원문 (중국어)
A semiconductor device includes a substrate, a drift region, a channel region, a source region, a gate electrode layer and a gate pad. The drift region is located in the substrate. The gate electrode layer is located above the drift region and is adjacent to the channel region and the source region, in which the gate electrode layer includes a cell area, a connection area and a gate pad area. The cell area at least covers the channel region in the substrate. The connection area is adjacent to the cell area, in which the connection area has at least one opening that penetrates the connection area. The gate pad contacts the gate pad area of the gate electrode layer, in which the gate pad and the at least one opening of the connection area of the gate electrode layer is laterally separated.