MINORITY CARRIER COLLECTOR FOR DIODE AND TRANSISTOR
개요
발명자
Zachary Lee; Alexei Sadovnikov
IPC 분류
CPC 분류
A semiconductor device includes a first node having a first conductivity type in a semiconductor layer, a second node having a first region with a second, opposite, conductivity type in the semiconductor layer, and a second region adjacent to the first region in the semiconductor layer, and a minority carrier collector having the first conductivity type in the second region of the second node in the semiconductor layer. Another semiconductor device includes an anode in a semiconductor layer, a cathode spaced apart from the anode in the semiconductor layer, and a minority carrier collector adjacent the cathode in the semiconductor layer and having P-type dopants.
원문 (중국어)
A semiconductor device includes a first node having a first conductivity type in a semiconductor layer, a second node having a first region with a second, opposite, conductivity type in the semiconductor layer, and a second region adjacent to the first region in the semiconductor layer, and a minority carrier collector having the first conductivity type in the second region of the second node in the semiconductor layer. Another semiconductor device includes an anode in a semiconductor layer, a cathode spaced apart from the anode in the semiconductor layer, and a minority carrier collector adjacent the cathode in the semiconductor layer and having P-type dopants.