SOLID PHASE EPITAXY OF AMORPHOUS SEMICONDUCTOR OVER A CRYSTALLINE SUBSTRATE
개요
발명자
Haowen Bu; Umamaheswari Aghoram; Jonathan Lewis; Xiangyu Zhu; Majid Movahed Mansoori
IPC 분류
CPC 분류
A semiconductor device comprises a semiconductor substrate, a first crystalline silicon layer over the semiconductor substrate, an electronic component extending into the first crystalline silicon layer, a second crystalline silicon layer over the electronic component and the first crystalline silicon layer, and a layer of distributed silicon oxide inclusions between the first crystalline silicon layer and the second crystalline silicon layer.
원문 (중국어)
A semiconductor device comprises a semiconductor substrate, a first crystalline silicon layer over the semiconductor substrate, an electronic component extending into the first crystalline silicon layer, a second crystalline silicon layer over the electronic component and the first crystalline silicon layer, and a layer of distributed silicon oxide inclusions between the first crystalline silicon layer and the second crystalline silicon layer.