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기록

SOLID PHASE EPITAXY OF AMORPHOUS SEMICONDUCTOR OVER A CRYSTALLINE SUBSTRATE

발명심사 중
3조회수
26청구항 · 4 독립항
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개요

발명자

Haowen Bu; Umamaheswari Aghoram; Jonathan Lewis; Xiangyu Zhu; Majid Movahed Mansoori

IPC 분류

H1L 27/6H1L 21/2H1L 21/225H1L 29/94

CPC 분류

H10D84/811H1L21/2592H1L21/2667H1L21/2253H10D1/665

A semiconductor device comprises a semiconductor substrate, a first crystalline silicon layer over the semiconductor substrate, an electronic component extending into the first crystalline silicon layer, a second crystalline silicon layer over the electronic component and the first crystalline silicon layer, and a layer of distributed silicon oxide inclusions between the first crystalline silicon layer and the second crystalline silicon layer.

원문 (중국어)

A semiconductor device comprises a semiconductor substrate, a first crystalline silicon layer over the semiconductor substrate, an electronic component extending into the first crystalline silicon layer, a second crystalline silicon layer over the electronic component and the first crystalline silicon layer, and a layer of distributed silicon oxide inclusions between the first crystalline silicon layer and the second crystalline silicon layer.