GALLIUM NITRIDE POWER DEVICE WITH WIDE-RANGE WORKING GATE VOLTAGE
개요
발명자
Weifeng SUN; Siyang LIU; Sheng LI; Ziyu CHEN; Longxing SHI
IPC 분류
CPC 분류
A gallium nitride power device with wide-range working gate voltage structurally includes a base and isolation regions, wherein the base is provided with a substrate, a nucleating layer, a buffer layer, a channel layer, a barrier layer and a passivation layer in sequence from the bottom up, and a voltage-limiting tube region, a power tube region and a bleed-off tube region are arranged on the barrier layer. A first metallic drain electrode in the voltage-limiting tube region and a third metallic gate electrode in the bleed-off tube region are connected via a first metallic interconnector and connected to an input gate voltage, and a first metallic source electrode in the voltage-limiting tube region, a second metallic gate electrode in the power tube region and a third metallic drain electrode in the bleed-off tube region are connected via a second metallic interconnector,
원문 (중국어)
A gallium nitride power device with wide-range working gate voltage structurally includes a base and isolation regions, wherein the base is provided with a substrate, a nucleating layer, a buffer layer, a channel layer, a barrier layer and a passivation layer in sequence from the bottom up, and a voltage-limiting tube region, a power tube region and a bleed-off tube region are arranged on the barrier layer. A first metallic drain electrode in the voltage-limiting tube region and a third metallic gate electrode in the bleed-off tube region are connected via a first metallic interconnector and connected to an input gate voltage, and a first metallic source electrode in the voltage-limiting tube region, a second metallic gate electrode in the power tube region and a third metallic drain electrode in the bleed-off tube region are connected via a second metallic interconnector,