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기록

SEMICONDUCTOR DEVICE WITH DIELECTRIC ISOLATION STRUCTURE

발명심사 중
1조회수
20청구항 · 3 독립항
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개요

발명자

Shay Reboh; Lei Zhuang; Ruilong Xie; Shahrukh Khan; James P Mazza

IPC 분류

H1L 27/92H1L 21/822H1L 21/8238H1L 23/528H1L 29/6H1L 29/417H1L 29/423H1L 29/66H1L 29/775H1L 29/786

CPC 분류

H10D84/856H1L23/5286H10D30/14H10D30/43H10D30/6729H10D30/6735H10D30/6757H10D62/121H10D84/186H10D84/188H10D84/38H10D88/1

A semiconductor structure includes a first set of vertically stacked contacts, a second set of vertically stacked contacts, a first set of stacked transistor devices associated with the first set of vertically stacked contacts, and a second set of stacked transistor devices associated with the second set of vertically stacked contacts. The second set of stacked transistor devices is adjacent to the first set of stacked transistor devices, and a dielectric isolation pillar is disposed between the first set of vertically stacked contacts and the second set of vertically stacked contacts.

원문 (중국어)

A semiconductor structure includes a first set of vertically stacked contacts, a second set of vertically stacked contacts, a first set of stacked transistor devices associated with the first set of vertically stacked contacts, and a second set of stacked transistor devices associated with the second set of vertically stacked contacts. The second set of stacked transistor devices is adjacent to the first set of stacked transistor devices, and a dielectric isolation pillar is disposed between the first set of vertically stacked contacts and the second set of vertically stacked contacts.