CNIPA.AI
검색으로 돌아가기
기록

IMAGING DEVICE

발명심사 중
3조회수
18청구항 · 1 독립항
§ Ⅰ

개요

발명자

Yoshiaki KIKUCHI; Hidemitsu OUCHI; Manabu TOMITA; Toshiki HAYASHI; Hisashi CHIBA; Hideomi KUMANO

IPC 분류

H10F 39/H10F 39/18

CPC 분류

H10F39/802H10F39/182

An imaging device includes a photoelectric converter, a first active element, and a first semiconductor layer. The photoelectric converter generates electric charge. The first active element performs a predetermined operation on the electric charge generated by the photoelectric converter, and includes a gate electrode including a first electrode part, a second electrode part, and a third electrode part. The first electrode part and the second electrode part are provided side by side in a first direction. The third electrode part couples the first electrode part and the second electrode part to each other. The first semiconductor layer includes a first surface and a second surface, has the first electrode part and the second electrode part of the gate electrode embedded in the first semiconductor layer on a side of the first surface, and includes a first semiconductor region between the first electrode part and the second electrode part.

원문 (중국어)

An imaging device includes a photoelectric converter, a first active element, and a first semiconductor layer. The photoelectric converter generates electric charge. The first active element performs a predetermined operation on the electric charge generated by the photoelectric converter, and includes a gate electrode including a first electrode part, a second electrode part, and a third electrode part. The first electrode part and the second electrode part are provided side by side in a first direction. The third electrode part couples the first electrode part and the second electrode part to each other. The first semiconductor layer includes a first surface and a second surface, has the first electrode part and the second electrode part of the gate electrode embedded in the first semiconductor layer on a side of the first surface, and includes a first semiconductor region between the first electrode part and the second electrode part.