IMAGE SENSOR AND METHOD FOR MAKING THE SAME
개요
출원인
Shanghai Huali Microelectronics Corporation
발명자
Chunyan YANG; Chenchen QIU; Hui CHEN
IPC 분류
CPC 분류
The present application discloses a cell structure of an image sensor, comprising: a semiconductor substrate, and a photoelectric conversion diode formed in the semiconductor substrate. More than one grooves are formed in a back region of the semiconductor substrate, and the grooves have cross sections in a triangle shape or an inverted trapezoid shape with a downward apex. The grooves are filled with a first dielectric layer having a refractive index less than that of the semiconductor substrate. The first dielectric layer filled in the grooves forms an optical path increasing structure for increasing an effective optical path of back incoming light. The grooves have sides along a first crystalline surface of the semiconductor substrate, and the first crystalline surface is a stop surface for anisotropic etching of the semiconductor substrate. The present application also discloses a method of making an image sensor.
원문 (중국어)
The present application discloses a cell structure of an image sensor, comprising: a semiconductor substrate, and a photoelectric conversion diode formed in the semiconductor substrate. More than one grooves are formed in a back region of the semiconductor substrate, and the grooves have cross sections in a triangle shape or an inverted trapezoid shape with a downward apex. The grooves are filled with a first dielectric layer having a refractive index less than that of the semiconductor substrate. The first dielectric layer filled in the grooves forms an optical path increasing structure for increasing an effective optical path of back incoming light. The grooves have sides along a first crystalline surface of the semiconductor substrate, and the first crystalline surface is a stop surface for anisotropic etching of the semiconductor substrate. The present application also discloses a method of making an image sensor.