IMAGE SENSOR
개요
발명자
Mintae CHUNG; Donghyun KIM; Dong-Chul LEE; Tae-Hun LEE; Sungsoo CHOI
IPC 분류
CPC 분류
An image sensor may include a substrate and a plurality of pixel regions. At least one of the plurality of pixel regions includes a photoelectric conversion portion in the substrate and a pixel circuit adjacent to the first surface of the substrate. The pixel circuit may include a plurality of buried patterns, which each may have a buried structure in the substrate. The pixel circuit may include a first transistor including a first gate electrode and a second transistor including a second gate electrode. The first gate electrode may be a vertical transfer gate electrode. A cross-sectional shape of the second gate electrode may be different from a cross-sectional shape of the first gate electrode. The plurality of buried patterns may include the first gate electrode and the second gate electrode.
원문 (중국어)
An image sensor may include a substrate and a plurality of pixel regions. At least one of the plurality of pixel regions includes a photoelectric conversion portion in the substrate and a pixel circuit adjacent to the first surface of the substrate. The pixel circuit may include a plurality of buried patterns, which each may have a buried structure in the substrate. The pixel circuit may include a first transistor including a first gate electrode and a second transistor including a second gate electrode. The first gate electrode may be a vertical transfer gate electrode. A cross-sectional shape of the second gate electrode may be different from a cross-sectional shape of the first gate electrode. The plurality of buried patterns may include the first gate electrode and the second gate electrode.