SPIN-ORBIT TORQUE MAGNETIC RANDOM ACCESS MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

원문 (중국어)

A spin-orbit torque magnetic random access memory device includes a dielectric layer, a magnetic tunneling junction structure, a spin-orbit torque layer, and bottom electrode. The dielectric layer is disposed above a substrate, and a first via hole penetrates through the dielectric layer in a vertical direction. The magnetic tunneling junction structure and the spin-orbit torque layer are disposed above the dielectric layer, and the magnetic tunneling junction structure is located on the spin-orbit torque layer. The bottom electrode is disposed above the substrate, and the bottom electrode is located under the spin-orbit torque layer. A first portion of the bottom electrode is disposed above the dielectric layer, and a second portion of the bottom electrode is disposed in the first via hole and directly connected with the first portion of the bottom electrode.