PHASE CHANGE MATERIAL RADIO-FREQUENCY (RF) SWITCH HAVING A REDUCED DIELECTRIC CONSTANT AROUND A HEATER ELEMENT AND METHOD FOR FORMING THE SAME
개요
출원인
Taiwan Semiconductor Manufacturing Company Limited
발명자
Tsung-Hsueh Yang; Yu-Wen Wang; Yu-Jui Tseng; Fu-Ting Sung; Kuo-Chyuan Tzeng
IPC 분류
CPC 분류
A phase change memory switch may be provided by forming a heater element, a first electrode, and a second electrode over an insulating layer that overlies a substrate; by forming encapsulated cavities formed within a dielectric material layer between a strip portion of the heater element and the first electrode and between the strip portion and the second electrode by depositing a dielectric material around, and over, the heater element, the first electrode, and the second electrode; and by forming a phase change material (PCM) portion over the heater element, the first electrode, and the second electrode such that the phase change material portion contacts the first electrode and the second electrode and is spaced from the heater element.
원문 (중국어)
A phase change memory switch may be provided by forming a heater element, a first electrode, and a second electrode over an insulating layer that overlies a substrate; by forming encapsulated cavities formed within a dielectric material layer between a strip portion of the heater element and the first electrode and between the strip portion and the second electrode by depositing a dielectric material around, and over, the heater element, the first electrode, and the second electrode; and by forming a phase change material (PCM) portion over the heater element, the first electrode, and the second electrode such that the phase change material portion contacts the first electrode and the second electrode and is spaced from the heater element.