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기록

Display substrate, manufacturing method, display panel, display device and detection method

기타 / 미제공알 수 없음

데이터 출처: EPO OPS

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91885644패밀리
§ Ⅰ

개요

출원인

BEIJING BOE DISPLAY TECH CO; BOE TECHNOLOGY GROUP CO LTD

출원 번호

CN20231088008

발명자

WANG JIGUO; QI SHENGMEI; WANG SHIJUN; WANG YANG; DING TENGFEI; LI HUI; CHEN XI; TAI YUKE; YANG XINLAN; LIU YI; QIU ZHANGJIE; WEI ZHAN; LIANG HAIYAO; ZHANG SHENGFENG; CHEN GONGDA; PENG ZHOU

출원일

Jan 18, 2023

공개일

Jul 19, 2024

특허 패밀리 ID

91885644

IPC 분류

G01J1/42G01J1/44G02F1/13G02F1/133G02F1/1343G02F1/1362

CPC 분류

G01J1/0204G01J1/4204G01J1/44G02F1/1309G02F1/13306G02F1/13312G02F1/133357G02F1/133512G02F1/134318G02F1/136227G02F1/1368H10D86/021H10D86/0231H10D86/421H10D86/451H10K30/65G01J1/32G01J2001/4473G02F1/13318

The invention discloses a display substrate and a manufacturing method thereof, a display panel, a display device and a detection method. The display substrate in one embodiment comprises a substrate; the driving circuit layer is arranged on the substrate, the driving circuit layer in the non-display area comprises a photosensitive sensor, and the photosensitive sensor comprises a low-temperature polycrystalline silicon thin film transistor and a photosensitive device; the photosensitive device comprises a semiconductor part which is arranged on the same layer as an active layer of the low-temperature polycrystalline silicon thin film transistor, a first conductor part which is arranged on the same layer as a source electrode of the low-temperature polycrystalline silicon thin film transistor, and a second conductor part which is arranged on the same layer as a drain electrode of the low-temperature polycrystalline silicon thin film transistor. The photosensitive device responds to an input signal and irradiation of external incident light to the semiconductor part to output photosensitive current, and the low-temperature polycrystalline silicon thin film transistor responds to the input signal to output reference current. According to the embodiment of the invention, the photosensitive sensor is formed by adopting the manufacturing process of the low-temperature polycrystalline silicon thin film transistor, so that the ambient light can be automatically sensed.

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