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기록

Storage device, manufacturing method thereof and electronic equipment

기타 / 미제공알 수 없음

데이터 출처: EPO OPS

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92763490패밀리
§ Ⅰ

개요

출원인

HUAWEI TECH CO LTD

출원 번호

CN202310352148

발명자

JIAO GUANGFAN; JING WEILIANG; WANG ZHENGBO; LIAO HENG

출원일

Mar 24, 2023

공개일

Sep 24, 2024

특허 패밀리 ID

92763490

IPC 분류

H10B12/00

CPC 분류

H10B12/00H10B12/03H10B12/053H10B12/30H10B12/34H10B12/488

The invention provides a storage device, a manufacturing method thereof and electronic equipment, relates to the technical field of storage, and can improve the row hammer problem of the storage device. The storage device comprises a substrate with a plurality of active regions, a plurality of first grooves arranged in the active regions, and second grooves respectively arranged on two sides of the active regions. Moreover, a plurality of storage units are arranged in the active regions of the storage device, and the second grooves are used for isolating the storage units in the two adjacent active regions. A first word line is arranged in the first groove, and the first word line is electrically connected with the storage unit. A second word line is disposed in the second trench. Besides, according to the storage device, at least one isolation dielectric layer is arranged in the active region, a gap is formed between the isolation dielectric layer and the first word line, and a charge leakage channel generated by the word line in the active region can be blocked through the isolation dielectric layer, namely, the leakage path of the charge is reduced, so that the row half problem can be relieved.

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